THE LATERAL EXTENT OF OXIDATION-ENHANCED DIFFUSION OF PHOSPHORUS IN (100) SILICON

被引：0

作者：

TANIGUCHI, K ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C318 / C318

页数：1

共 50 条

[1] LATERAL EXTENT OF OXIDATION-ENHANCED DIFFUSION OF PHOSPHORUS IN (100) SILICON
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[8] OXIDATION-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN HEAVILY PHOSPHORUS-DOPED SILICON
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