RADIATION-DAMAGE AND ANNEALING BEHAVIOR IN BE+-IMPLANTED PURE GA(AL)SB LAYERS

Implantation of Be+ ions into GaAlSb epilayers is used to realize the p+ layer of the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sb n-/GaSb n+ (1.55-mu-m) avalanche photodetector whose performances are detailed in Ref. (1). The GaAlSb layers are grown using liquid phase epitaxy (LPE); the quality of these as-grown layers is shown through photoluminescence and channeling measurements. The last part of this paper is devoted to the damaging level in the Be+-implanted layers. Some annealing techniques are presented as a mean of restoration of the implanted layers. It is clear from the results that the Be+ ion implantation leads to a low damage level in this III-V compound.