共 16 条
- [1] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-XINXASYSB1-Y ALLOWS LATTICE MATCHED WITH GASB REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (11): : 1459 - 1467
- [3] GROWTH AND PHOTOLUMINESCENCE OF GASB AND GA1-XINXASYSB1-Y GROWN ON GASB SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY PHYSICAL REVIEW B, 1993, 47 (03): : 1329 - 1339
- [4] GROWTH LIMITATIONS BY THE MISCIBILITY GAP IN LIQUID-PHASE EPITAXY OF GA1-XINXASYSB1-Y ON GASB MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 125 - 128
- [7] Liquid-phase epitaxial growth of Ga1-xInxAsySb1-y solid solution using Pb neutral solvent ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 55 - 58
- [9] GROWTH AND PHOTOLUMINESCENCE OF GASB AND GA1-XINXASYSB1-Y GROWN ON GASB SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY, (VOL 47, PG 1329, 1993) PHYSICAL REVIEW B, 1993, 48 (11): : 8521 - 8521