IDENTIFICATION AND LOCALIZATION OF GATE OXIDE WEAKNESSES IN N-MOS TRANSISTORS THROUGH FOWLER-NORDHEIM TUNNELING AND SPICE SIMULATION

被引：0

作者：

KRAKAUER, D ^{[1
]}

DOYLE, BS ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 04期

关键词：

Semiconductor devices and materials; Simulation;

D O I：

10.1049/el:19900155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analysis of the I/V characteristics after Fowler-Nordheim (F-N) injection of n-MOS transistors with weak source-drain overlap regions show the presence of an anomalous ‘hump’. SPICE simulations show that the same hump can arise in localised damage regions along the source-drain periphery, and that this is possibly in the bird's beak region. The results suggest that SPICE simulations and F-N injection can be used to study localised damage in MOS transistors. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：230 / 231

页数：2

共 33 条

[1] FOWLER-NORDHEIM TUNNELING OF CARRIERS IN MOS-TRANSISTORS - 2-DIMENSIONAL SIMULATION OF GATE CURRENT EMPLOYING FIELDAY
MOHAMMAD, SN
FIORENZA, G
ACOVIC, A
JOHNSON, JB
CARTER, RL
SOLID-STATE ELECTRONICS, 1995, 38 (04) : 807 - 814
[2] Impact of oxide charge buildup on Fowler-Nordheim tunneling current characteristics in a MOS structure
Kies, R
Ghibaudo, G
Pananakakis, G
MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 267 - 270
[3] Fowler-Nordheim tunneling in epitaxial yttrium oxide on silicon for high-k gate applications
Mereu, B
Vellianitis, G
Apostolopoulos, G
Dimoulas, A
Alexe, A
CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2001, : 309 - 312
[4] The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress
Chang, KM
Li, CH
Wang, SW
Yeh, TH
Yang, JY
Lee, TC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) : 1684 - 1689
[5] VOLTAGE SHIFTS OF FOWLER-NORDHEIM TUNNELING J-V PLOTS IN THIN GATE OXIDE MOS STRUCTURES DUE TO TRAPPED CHARGES
OH, SJ
YEOW, YT
SOLID-STATE ELECTRONICS, 1989, 32 (06) : 507 - 511
[6] Influence of gate material on the oxide degradation in MOS structures during high-field Fowler-Nordheim stress
Samanta, P
Sarkar, CK
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 892 - 895
[7] DEGRADATION AND RECOVERY OF METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES STRESSED WITH FOWLER-NORDHEIM (FN) GATE CURRENT
INOKAWA, H
AJIMINE, EM
YANG, CY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (9A): : 1931 - 1936
[8] Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate
Croci, S
Plossu, C
Balland, B
Dubois, C
Boivin, P
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (4-6) : 333 - 338
[9] A new approach to investigate gate oxide degradation of MOS capacitors during Fowler-Nordheim stress at low electron fluence
Samanta, P
Sarkar, CK
SOLID-STATE ELECTRONICS, 1998, 42 (01) : 165 - 171
[10] Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress
UMR Cent Natl de la Recherche, Scientifique, Grenoble, France
Microelectron Reliab, 11-12 (1619-1622):

← 1 2 3 4 →