STUDY OF THE ELECTROPHYSICAL CHARACTERISTICS OF SILICON FILMS ON SAPPHIRE

被引:0
|
作者
LOKSHIN, MM
LYSENKO, VS
RUDENKO, TE
LAPIDUS, EM
KOROVIN, SK
机构
来源
UKRAINSKII FIZICHESKII ZHURNAL | 1984年 / 29卷 / 05期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:738 / 742
页数:5
相关论文
共 50 条
  • [1] Structural and electrophysical characteristics of YBCO films on sapphire
    A. S. Petrov
    Yu. I. Tsyganok
    E. P. Naiden
    T. L. Levdikova
    V. K. Golovleva
    V. T. Podlesnykh
    A. S. Tret’yakov
    V. F. Vratskikh
    Russian Physics Journal, 1998, 41 (5) : 465 - 467
  • [2] ELECTROPHYSICAL CHARACTERISTICS OF SILICON-CARBIDE FILMS ON SILICON
    VLASKINA, SI
    KRASIKOVA, AV
    SIDYAKIN, VG
    INORGANIC MATERIALS, 1989, 25 (09) : 1326 - 1328
  • [3] Characteristics of silicon dioxide films prepared on sapphire
    Feng, LP
    Liu, ZT
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 122 (01): : 7 - 11
  • [4] SILICON FILMS ON SAPPHIRE
    CRISTOLOVEANU, S
    REPORTS ON PROGRESS IN PHYSICS, 1987, 50 (03) : 327 - 371
  • [5] EFFECTS OF OXIDATION ON ELECTRICAL CHARACTERISTICS OF SILICON-ON-SAPPHIRE FILMS
    ROSS, EC
    WARFIELD, G
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2339 - &
  • [6] INFLUENCE OF REACTOR IRRADIATION UPON THE ELECTROPHYSICAL CHARACTERISTICS OF HETEROEPITAXIAL p-SILICON-ON-SAPPHIRE LAYERS.
    Koba, B.V.
    Litvinov, V.L.
    Ocheretyanskii, A.L.
    Stuchebnikov, V.M.
    Fedotov, I.B.
    Ukhin, N.A.
    Khasikov, V.V.
    Chernitsyn, V.N.
    Soviet atomic energy, 1985, 59 (01): : 610 - 613
  • [7] A COMBINED TEM XRD STUDY OF MOCVD GAAS FILMS GROWN ON SILICON, SAPPHIRE AND SILICON-ON-SAPPHIRE
    BURKE, MG
    MCMULLIN, PG
    GREGGI, J
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 121 - 126
  • [8] A COMBINED TEM XRD STUDY OF MOCVD GAAS FILMS GROWN ON SILICON, SAPPHIRE AND SILICON-ON-SAPPHIRE
    BURKE, MG
    MCMULLIN, PG
    GREGGI, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 121 - 126
  • [9] CHANGES IN ELECTROPHYSICAL PROPERTIES OF HEAVILY DOPED NEUTRON-IRRADIATED P-TYPE SILICON FILMS ON SAPPHIRE
    KOBA, BV
    LITVINOV, VL
    OCHERETYANSKII, AL
    STUCHEBNIKOV, VM
    UKHIN, NA
    FEDOTOV, IB
    KHASIKOV, VV
    CHERNITSYN, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 624 - 626
  • [10] Luminescence of heteroepitaxial silicon films on sapphire
    Korshunov, FP
    Mudryi, AV
    Patuk, AI
    Shakin, IA
    DOKLADY AKADEMII NAUK BELARUSI, 1998, 42 (04): : 70 - 73