INTERACTING DONORS IN N-TYPE GAP STUDIED WITH RAMAN-SCATTERING AND ELECTRON-SPIN-RESONANCE TECHNIQUES

被引:15
|
作者
GALTIER, P [1 ]
MARTINEZ, G [1 ]
LAMBERT, B [1 ]
GAUNEAU, M [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,LAB ICM,F-22301 LANNION,FRANCE
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 10期
关键词
D O I
10.1103/PhysRevB.33.6909
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6909 / 6915
页数:7
相关论文
共 50 条
  • [1] RAMAN-SCATTERING AND ELECTRON-SPIN-RESONANCE STUDIES OF FLUOROZIRCONATE GLASSES
    FREITAS, JA
    STROM, U
    TRAN, DC
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 81 (03) : 303 - 317
  • [2] THE STUDY OF ELECTRON DYNAMICS IN N-TYPE CDS BY SPIN-FLIP RAMAN-SCATTERING
    GESCHWIND, S
    WALSTEDT, RE
    ROMESTAIN, R
    NARAYANAMURTI, V
    KUMMER, RB
    FEIGENBLATT, R
    DEVLIN, G
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (06): : 961 - 977
  • [3] RAMAN-SCATTERING FROM COHERENT SPIN STATES IN N-TYPE CDS
    ROMESTAI.R
    GESCHWIN.S
    DEVLIN, GE
    WOLFF, PA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (09) : 796 - 796
  • [4] RAMAN-SCATTERING FROM COHERENT SPIN STATES IN N-TYPE CDS
    ROMESTAIN, R
    GESCHWIND, S
    DEVLIN, GE
    WOLFF, PA
    PHYSICAL REVIEW LETTERS, 1974, 33 (01) : 10 - 14
  • [5] INVESTIGATION OF N-TYPE SI BY ELECTRON-SPIN-RESONANCE AND CAPACITANCE METHODS
    ABDURAKHMANOV, KP
    KOTOV, BA
    KREISSL, J
    LEBEDEV, AA
    UTAMURADOVA, SB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 218 - 219
  • [6] RESONANT RAMAN-SCATTERING BY SPIN-DENSITY FLUCTUATIONS IN N-TYPE GERMANIUM
    MESTRES, N
    CARDONA, M
    PHYSICAL REVIEW LETTERS, 1985, 55 (10) : 1132 - 1135
  • [7] INHOMOGENEITIES IN N-TYPE AND SEMIINSULATING INP CRYSTALS STUDIED BY PHOTOLUMINESCENCE TOPOGRAPHY AND RAMAN-SCATTERING
    PASTRNAK, J
    GREGORA, I
    OSWALD, J
    CHVOJ, Z
    PEKAREK, L
    VORLICEK, V
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1991, 126 (02): : 493 - 500
  • [8] ELECTRON-SPIN-RESONANCE LINEWIDTH BEHAVIOR FOR BARELY METALLIC N-TYPE SILICON
    ZARIFIS, V
    CASTNER, TG
    PHYSICAL REVIEW B, 1987, 36 (11): : 6198 - 6201
  • [9] ELECTRON-PARAMAGNETIC-RES AND SPIN-FLIP RAMAN-SCATTERING IN THE N-TYPE MAGNETICALLY MIXED SEMICONDUCTORS
    RYABCHENKO, SM
    SEMENOV, YG
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 134 (01): : 281 - 288
  • [10] INSITU ELECTRON-SPIN-RESONANCE MEASUREMENTS OF ELECTROCHEMICALLY DOPED N-TYPE POLYTHIOPHENE
    ONODA, M
    MANDA, Y
    MORITA, S
    YOSHINO, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (01) : 213 - 217