TRANSPORT IN SILICON MONOLITHIC HOT-ELECTRON STRUCTURES

被引:3
|
作者
HERBERT, DC
KIRTON, MJ
机构
来源
PHYSICA B & C | 1985年 / 129卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90640-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:537 / 541
页数:5
相关论文
共 50 条
  • [1] CURRENT TRANSPORT IN MONOLITHIC HOT-ELECTRON STRUCTURES
    SHANNON, JM
    GOLDSMITH, BJ
    THIN SOLID FILMS, 1982, 89 (01) : 21 - 26
  • [2] TRANSPORT IN SILICON MONOLITHIC HOT ELECTRON STRUCTURES.
    Herbert, D.C.
    Kirton, M.J.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1984, 129 B-C (1-3): : 537 - 541
  • [3] HOT-ELECTRON TRANSPORT IN SILICON DIOXIDE
    DIMARIA, DJ
    FISCHETTI, MV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C138 - C138
  • [4] HOT-ELECTRON TRANSPORT IN MOS STRUCTURES
    HESS, K
    SURFACE SCIENCE, 1978, 73 (01) : 135 - 135
  • [5] HOT-ELECTRON TRANSPORT IN QUANTUM STRUCTURES
    MORI, N
    HAMAGUCHI, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 941 - 945
  • [6] TRANSPORT OF ELECTRONS IN MONOLITHIC HOT-ELECTRON SI TRANSISTORS
    BERZ, F
    SOLID-STATE ELECTRONICS, 1986, 29 (12) : 1213 - 1222
  • [8] UNDERSTANDING HOT-ELECTRON TRANSPORT IN SILICON DEVICES - IS THERE A SHORTCUT
    FISCHETTI, MV
    LAUX, SE
    CRABBE, E
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1058 - 1087
  • [9] Silicon hot-electron bolometers
    Stevenson, TR
    Cao, NT
    Henry, RM
    Hsieh, WT
    Isenberg, HD
    Mitchell, RR
    Moseley, SH
    Schneider, G
    Stahle, CM
    Travers, DE
    Wollack, EJ
    MILLIMETER AND SUBMILLIMETER DETECTORS FOR ASTRONOMY II, 2004, 5498 : 866 - 875
  • [10] HOT-ELECTRON DIFFUSIVITY IN SILICON
    CHATTOPADHYAY, D
    NAG, BR
    SOLID STATE COMMUNICATIONS, 1977, 22 (09) : 569 - 571