DISCUSSION OF THE TIME AND TEMPERATURE-DEPENDENCE OF F-CENTER FORMATION IN ALKALI-HALIDES

被引：0

作者：

WILLIAMS, RT

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SEMICONDUCTORS AND INSULATORS | 1983年 / 5卷 / 3-4期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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引用

页码：457 / 472

页数：16

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[1] TEMPERATURE-DEPENDENCE OF F-CENTER ACCUMULATION EFFICIENCY IN DOPED ALKALI-HALIDES
KOTOMIN, E
FABRIKANT, I
TALE, I
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (15): : 2903 - 2915
[2] SIMPLE APPROACH TO TEMPERATURE AND PRESSURE-DEPENDENCE OF F-CENTER ABSORPTION ENERGIES IN ALKALI-HALIDES
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SIEBER, K
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 114 (01): : K1 - K4
[3] TEMPERATURE-DEPENDENCE OF COMPRESSIBILITY OF ALKALI-HALIDES
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PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 106 (02): : K99 - K102
[4] MORE ON THE EMISSION BAND OF THE F-CENTER IN ALKALI-HALIDES
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PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02): : K151 - K154
[5] LATTICE DEFORMATION AROUND AN F-CENTER IN ALKALI-HALIDES
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[6] AN ALTERNATIVE SEMICONTINUUM MODEL FOR THE F-CENTER IN ALKALI-HALIDES
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[7] MORE ON THE QUANTUM EFFICIENCY OF THE F-CENTER IN ALKALI-HALIDES
BOSI, L
NIMIS, M
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1991, 168 (01): : K33 - K36
[8] VIBRATIONAL PROPERTIES OF THE F-CENTER ABSORPTION IN ALKALI-HALIDES
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (32): : 4907 - 4921
[9] TEMPERATURE-DEPENDENCE OF THE POLARIZATION OF THE EMISSION OF THE GA+ CENTER IN ALKALI-HALIDES
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[10] TEMPERATURE-DEPENDENCE OF BULK MODULUS FOR ALKALI-HALIDES
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