ION-BEAM DAMAGE IN EPITAXIALLY GROWN MCT ON GAAS

被引：7
|
作者：
RUSSO, SP
JOHNSTON, PN
ELLIMAN, RG
DOOLEY, SP
JAMIESON, DN
PAIN, GN
机构：
[1] ROYAL MELBOURNE INST TECHNOL,CTR MAT TECHNOL,MELBOURNE,VIC 3001,AUSTRALIA
[2] UNIV MELBOURNE,SCH PHYS,MICRO ANALYT RES CTR,PARKVILLE,VIC 3052,AUSTRALIA
[3] TELECOM AUSTRALIA,RES LABS,CLAYTON 3168,AUSTRALIA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(92)95475-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ion beam analysis has been used to investigate the epitaxial quality and compositional and thickness uniformity of epitaxial Hg1-xCdxTe (MCT) layers on GaAs substrates grown by low temperature MOCVD. To determine the effect of the ion beam on the MCT layer during a typical measurement, damage studies have been performed by channeling analysis using a nuclear microprobe. Microprobe channeling enabled high flux damage to be investigated. Areas of crystal ranging from approximately 30 x 30-mu-m2 to 260 x 260-mu-m2 were scanned using both 2.0 MeV H+ and He+ ions and the chi(min) measured as a function of ion beam dose. Macrobeam channeling was also performed with an unscanned beam of 1 mm spot size. The results indicate the acceptable range of dose for ion beam analysis.
引用
收藏
页码：251 / 255
页数：5
相关论文
共 50 条
  • [1] MASKLESS ION-BEAM WRITING OF PRECISE DOPING PATTERNS WITH BE AND SI FOR MOLECULAR-BEAM EPITAXIALLY GROWN MULTILAYER GAAS
    MIYAUCHI, E
    MORITA, T
    TAKAMORI, A
    ARIMOTO, H
    BAMBA, Y
    HASHIMOTO, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 189 - 193
  • [2] SURFACE DAMAGE OF REACTIVE ION-BEAM ETCHED GAAS
    NAGATA, K
    NAKAJIMA, O
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L510 - L512
  • [3] ELECTRICAL DAMAGE INDUCED BY ION-BEAM ETCHING OF GAAS
    SCHERER, A
    CRAIGHEAD, HG
    ROUKES, ML
    HARBISON, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 277 - 279
  • [4] ION-BEAM MIXING CHARACTERISTICS OF MOCVD GROWN INGAAS/GAAS SUPERLATTICES
    FORBES, DV
    COLEMAN, JJ
    KLATT, JK
    AVERBACK, RS
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 175 - 178
  • [5] Ion beam studies of CdTe films epitaxially grown on Si, GaAs and sapphire substrates
    Inst Tecnologico e Nuclear, Sacavem, Portugal
    Nucl Instrum Methods Phys Res Sect B, (220-224):
  • [6] Ion beam studies of CdTe films epitaxially grown on Si, GaAs and sapphire substrates
    Alves, E
    da Silva, MF
    Soares, JC
    Sochinskii, NV
    Bernardi, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 : 220 - 224
  • [7] ANNEALING BEHAVIOR OF DAMAGE INTRODUCED IN GAAS BY REACTIVE ION-BEAM ETCHING
    YAMANE, Y
    YAMASAKI, K
    MIZUTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L537 - L538
  • [8] RADICAL BEAM ION-BEAM ETCHING OF GAAS
    SKIDMORE, JA
    COLDREN, LA
    HU, EL
    MERZ, JL
    ASAKAWA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1885 - 1888
  • [9] ION-BEAM DAMAGE IN HOLLANDITE
    BARRY, JC
    HUTCHISON, JL
    SEGALL, RL
    JOURNAL OF MATERIALS SCIENCE, 1983, 18 (05) : 1421 - 1425
  • [10] Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition
    Pashchenko, Alexander S.
    Lunin, Leonid S.
    Danilina, Eleonora M.
    Chebotarev, Sergei N.
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2018, 9 : 2794 - 2801
12345