TRANSIT-TIME NEGATIVE-RESISTANCE IN BULK SI STRUCTURES SUBJECTED TO AVALANCHE INJECTION

被引：0

作者：

SPIRITO, P ^{[1
]}

VITALE, G ^{[1
]}

机构：

[1] IST ELETTROTECNICO, FAC INGEGNERIA, VIA CLAUDIO 21, 80125 NAPOLI, ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 12期

关键词：

D O I：

10.1109/T-ED.1975.18330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1087 / 1091

页数：5

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