ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111)

被引：36
|
作者：
GEWINNER, G
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
DERRIEN, J
THIRY, P
机构：
[1] CNRS,CTR RECH MECAN CROISSANCE CRISTALLINE,F-13288 MARSEILLE 9,FRANCE
[2] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.38.1879
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1879 / 1884
页数：6
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