SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION

被引：84

作者：

MCCALDIN, JO ^{[1
]}

MCGILL, TC ^{[1
]}

MEAD, CA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.568993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：802 / 806

页数：5

共 18 条

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[10] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY [J].

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PHYSICAL REVIEW LETTERS, 1976, 36 (01) :56-58

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