ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS

被引:87
|
作者
LEDEBO, LA [1 ]
RIDLEY, BK [1 ]
机构
[1] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
来源
关键词
D O I
10.1088/0022-3719/15/27/003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L961 / L964
页数:4
相关论文
共 50 条
  • [1] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS
    CLERJAUD, B
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19): : 3615 - 3661
  • [2] PINNING OF ENERGY-LEVELS OF TRANSITION-METAL IMPURITIES
    TERSOFF, J
    HARRISON, WA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1221 - 1224
  • [3] BEHAVIOR OF TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS
    OMELYANOVSKII, EM
    FISTUL, VI
    BALAGUROV, LA
    IVLEVA, VS
    KARATAEV, VV
    MILVIDSKII, MG
    POPKOV, AN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 381 - 382
  • [4] DEPENDENCE OF TRANSITION-METAL IMPURITY LEVELS ON HOST COMPOSITION IN III-V SEMICONDUCTORS
    HAMERA, M
    WALUKIEWICZ, W
    NOLTE, DD
    HALLER, EE
    PHYSICAL REVIEW B, 1989, 39 (14): : 10114 - 10119
  • [5] INVESTIGATION OF ENERGY-LEVELS DUE TO TRANSITION-METAL IMPURITIES IN METAL-FREE PHTHALOCYANINE
    LOUTFY, RO
    CHENG, YC
    JOURNAL OF CHEMICAL PHYSICS, 1980, 73 (06): : 2902 - 2910
  • [7] THEORY OF DEEP LEVELS OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS
    FLEUROV, VN
    KIKOIN, KA
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (09): : 1673 - 1683
  • [8] PROGRESS IN THE STUDY OF TRANSITION-METAL IMPURITIES IN III-V AND II-VI MATERIALS
    FAZZIO, A
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1987, : 65 - 72
  • [9] Direct d-d interactions among transition metal impurities in III-V semiconductors
    Fujita, Takeshi
    Raebiger, Hannes
    APPLIED PHYSICS EXPRESS, 2014, 7 (02)
  • [10] Behavior of nitrogen impurities in III-V semiconductors
    Zhang, Y
    Ge, WK
    JOURNAL OF LUMINESCENCE, 2000, 85 (04) : 247 - 260