LPE GROWTH OF PBSE ON BAF2

被引：0
|
作者：
MCCANN, PJ
FONSTAD, CG
机构：
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C577 / C577
页数：1
相关论文
共 50 条
  • [1] THE PRODUCTION OF PBSE/BAF2/PBSE MULTILAYERS
    VOGT, W
    ZOGG, H
    HELVETICA PHYSICA ACTA, 1984, 57 (06): : 776 - 778
  • [2] EPITACTIC GROWTH AND MIS-BEHAVIOR OF BAF2 AND PBSE
    ZOGG, H
    VOGT, W
    HELVETICA PHYSICA ACTA, 1984, 57 (04): : 536 - 538
  • [3] PREPARATION AND PROPERTIES OF EPITAXIAL PBSE/BAF2/PBSE STRUCTURES
    VOGT, W
    ZOGG, H
    MELCHIOR, H
    INFRARED PHYSICS, 1985, 25 (04): : 611 - 614
  • [4] LPE growth of crack-free PbSe layers on Si(100) using MBE-grown PbSe/BaF2/CaF2 buffer layers
    Strecker, BN
    McCann, PJ
    Fang, XM
    Hauenstein, RJ
    OSteen, M
    Johnson, MB
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (05) : 444 - 448
  • [5] GROWTH OF PBSE0.78TE0.22 LATTICE-MATCHED WITH BAF2
    MCCANN, PJ
    FONSTAD, CG
    THIN SOLID FILMS, 1993, 227 (02) : 185 - 189
  • [6] LIQUID-PHASE EPITAXIAL-GROWTH OF PBSE ON (111) AND (100) BAF2
    MCCANN, PJ
    FONSTAD, CG
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 687 - 692
  • [7] Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2 (111)
    Wu, H. F.
    Zhang, H. J.
    Lu, Y. H.
    Xu, T. N.
    Si, J. X.
    Li, H. Y.
    Bao, S. N.
    Wu, H. Z.
    He, P.
    JOURNAL OF CRYSTAL GROWTH, 2006, 294 (02) : 179 - 183
  • [8] EPITAXIAL-GROWTH OF BAF2 FILMS ONTO PBSE AND ELECTRONIC-PROPERTIES OF THE INTERFACE
    ZOGG, H
    VOGT, W
    MELCHIOR, H
    APPLIED PHYSICS LETTERS, 1984, 45 (03) : 286 - 288
  • [9] GROWTH OF BAF2 AND OF BAF2 SRF2 LAYERS ON (001)-ORIENTED GAAS
    CLEMENS, H
    STROMBERGER, U
    WEILGUNI, PC
    BAUER, G
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) : 1680 - 1686
  • [10] Raman scattering study of PbSe grown on (111) BaF2 substrate
    Yang, AL
    Wu, HZ
    Li, ZF
    Qiu, DJ
    Chang, Y
    Li, JF
    McCann, PJ
    Fang, XM
    CHINESE PHYSICS LETTERS, 2000, 17 (08) : 606 - 608
12345