PROPERTIES OF P-LAYERS OF THE ION-ALLOYED SILICON-CARBIDE, FORMED BY THE LASER-EMISSION

被引：0

作者：

VIOLIN, EE

GORIN, EA

POTAPOV, EN

TAIROV, YM

机构：

来源：

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1984年 / 10卷 / 24期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1527 / 1529

页数：3

共 50 条

[1] ANNEALING OF ION-ALLOYED LAYERS BY ACTIVITY OF LASER-RADIATION
ZARIPOV, MM
KHAIBULLIN, IB
SHTYRKOV, EI
USPEKHI FIZICHESKIKH NAUK, 1976, 120 (04): : 706 - 708
[2] INFLUENCE OF PULSED LASER IRRADIATION ON THE PROPERTIES OF IMPLANTED LAYERS OF SILICON-CARBIDE
VIOLIN, EE
VORONKO, ON
NOIBERT, F
POTAPOV, EN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 596 - 597
[3] INFLUENCE OF SURFACE DISSOCIATION ON THE PROPERTIES OF ION-IMPLANTED P-TYPE LAYERS IN SILICON-CARBIDE
GUDKOV, VA
KRYSOV, GA
MAKAROV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 105 - 106
[4] FORMATION OF SILICON-CARBIDE LAYERS BY THE ION-BEAM TECHNIQUE AND THEIR ELECTRICAL-PROPERTIES
KIMURA, T
YUGO, S
ZHOU, SB
ADACHI, Y
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 238 - 241
[5] STRUCTURE AND ANNEALING PROPERTIES OF SILICON-CARBIDE THIN-LAYERS FORMED BY IMPLANTATION OF CARBON-IONS IN SILICON
KIMURA, T
KAGIYAMA, S
YUGO, S
THIN SOLID FILMS, 1981, 81 (04) : 319 - 327
[6] Preparation and characterization of micro-crystalline hydrogenated silicon carbide p-layers
Eser, E
Hegedus, SS
Buchanan, WA
NCPV PHOTOVOLTAICS PROGRAM REVIEW: PROCEEDINGS OF THE 15TH CONFERENCE, 1999, 462 : 254 - 259
[7] CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS
ADDAMIANO, A
KLEIN, PH
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 291 - 294
[8] ION-BEAM AND LASER MIXING OF NICKEL OVERLAYERS ON SILICON-CARBIDE
NARAYAN, J
FATHY, D
HOLLAND, OW
APPLETON, BR
DAVIS, RF
BECHER, PF
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1577 - 1582
[9] ELECTRICAL-PROPERTIES OF A P-N-N+ STRUCTURE FORMED IN SILICON-CARBIDE BY IMPLANTATION OF ALUMINUM IONS
VODAKOV, YA
DEMAKOV, KD
KALININA, EV
MOKHOV, EN
RAMM, MG
KHOLUYANOV, GF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 1017 - 1020
[10] ULTRASHORT LASER-PULSE EFFECT ON ELECTROPHYSICAL PROPERTIES OF SILICON-CARBIDE
KALININA, EV
KOVALCHUK, YV
PRISHCHEPA, GV
SMOLSKII, OV
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (11): : 669 - 671

← 1 2 3 4 5 →