QUANTUM-WELL GAAS/ALGAAS SHALLOW-DONOR FAR-INFRARED PHOTOCONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

GOODHUE, WD ^{[1
]}

MUELLER, ER ^{[1
]}

LARSEN, DM ^{[1
]}

WALDMAN, J ^{[1
]}

CHAI, YH ^{[1
]}

LAI, SC ^{[1
]}

JOHNSON, GD ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,LOWELL,MA 01854

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductors utilizing planar-doped silicon shallow donors in GaAs quantum wells formed with AlGaAs barriers have been fabricated and measured to have far-infrared (FIR) resonant-wavelength responsivities of approximately 1 V W-1, with noise equivalent power values of approximately 1 X 10(-7) W Hz-1/2 at 4 K. The technology makes possible the use of FIR photoconductive magnetospectroscopy to measure the well position of sheet-doped silicon ions when incorporated at doping levels below 1 X 10(16) CM-3. A comparison of the measured position of the ions with the intended position reveals a discrepancy that can be linked to the growth parameters used to produce the structure.

引用

页码：941 / 944

页数：4

共 50 条

[1] VERTICALLY COMPACT 15 GHZ GAAS/ALGAAS MULTIPLE QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY
RALSTON, JD
GALLAGHER, DFG
TASKER, PJ
ZAPPE, HP
ESQUIVIAS, I
FLEISSNER, J
ELECTRONICS LETTERS, 1991, 27 (19) : 1720 - 1722
[2] Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy
Zhang, DH
Shi, W
Zhang, PH
Yoon, SF
Shi, X
APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1570 - 1572
[3] STRAINED ALGAINAS/ALGAAS QUANTUM-WELLS AND QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
OKEEFE, SS
SCHAFF, WJ
EASTMAN, LF
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (07) : 738 - 740
[4] COMPARISON OF SINGLE AND MULTIPLE QUANTUM-WELL STRAINED LAYER INGAAS/GAAS/ALGAAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
OFFSEY, SD
SCHAFF, WJ
LESTER, LF
EASTMAN, LF
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 551 - 554
[5] LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
CHONG, TC
FONSTAD, CG
APPLIED PHYSICS LETTERS, 1987, 51 (04) : 221 - 223
[6] GAAS GAINASP QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
ZHANG, G
NAPPI, J
PESSA, M
APPLIED PHYSICS LETTERS, 1994, 64 (08) : 1009 - 1011
[7] MOLECULAR-BEAM EPITAXY AND TECHNOLOGY FOR THE MONOLITHIC INTEGRATION OF QUANTUM-WELL LASERS AND ALGAAS/GAAS/ALGAAS-HEMT ELECTRONICS
BRONNER, W
HORNUNG, J
KOHLER, K
OLANDER, E
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 461 - 466
[8] INXGA1-XSB/GAAS QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
EKENSTEDT, MJ
OLSSON, E
TREIDERIS, G
ANDERSSON, TG
WANG, SM
QU, H
SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (03) : 341 - 345
[9] LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF SINGLE QUANTUM-WELL GAAS/ALGAAS LASERS
MIYAZAWA, S
SEKIGUCHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5B): : L921 - L923
[10] CHANNELED-SUBSTRATE GAAS/ALGAAS MULTIPLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WU, YH
WERNER, M
WANG, S
APPLIED PHYSICS LETTERS, 1984, 45 (06) : 606 - 608

← 1 2 3 4 5 →