NEW FIELD-EFFECT TRANSISTOR WITH QUANTUM WIRE AND MODULATION-DOPED HETEROSTRUCTURES

被引：28

|

作者：

TSUBAKI, K

FUKUI, T

TOKURA, Y

SAITO, H

SUSA, N

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 20期

关键词：

D O I：

10.1049/el:19880863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1267 / 1269

页数：3

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