SHIFT OF THE FUNDAMENTAL ABSORPTION-EDGE OF CDINGAS4 AND CDINALS4 UNDER HYDROSTATIC-PRESSURE

被引:0
|
作者
ABBASOV, AN
ZAMANOVA, RA
PANFILOV, VV
SUBBOTIN, SI
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:731 / 732
页数:2
相关论文
共 50 条
  • [1] DEPENDENCE OF THE FUNDAMENTAL ABSORPTION-EDGE OF CDINGAS4 ON HYDROSTATIC-PRESSURE
    TOYODA, T
    NAKANISHI, H
    ENDO, S
    IRIE, T
    PHYSICS LETTERS A, 1985, 107 (06) : 283 - 286
  • [2] STUDY OF FUNDAMENTAL ABSORPTION-EDGE OF CDINGAS4 BY WAVELENGTH MODULATION
    ABDULLAEV, GB
    KERIMOVA, TG
    MAMEDOV, SS
    MECHTIEV, TR
    NANI, RK
    SALAEV, EY
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 73 (01): : K69 - K72
  • [3] INVESTIGATION OF FUNDAMENTAL ABSORPTION-EDGE OF A NEW SEMICONDUCTING COMPOUND CDINGAS4
    ABDULLAEV, GB
    BOZHOVSKAYA, NV
    DZHURAEV, ND
    KUSHEV, DB
    MEKHTIEV, TR
    NANI, RK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1417 - 1418
  • [4] FUNDAMENTAL ABSORPTION-EDGE IN THE SEMICONDUCTOR CDINGAS4 AT HIGH-TEMPERATURES
    TOYODA, T
    NAKANISHI, H
    ENDO, S
    IRIE, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (04) : 747 - 751
  • [5] SHIFT OF THE FUNDAMENTAL ABSORPTION-EDGE OF T1SE UNDER HYDROSTATIC-PRESSURE
    ALLAKHVERDIEV, KR
    GASYMOV, SG
    MAMEDOV, TG
    SALAEV, EY
    EFENDIEVA, IK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 113 (02): : K127 - K129
  • [6] EXPONENTIAL ABSORPTION-EDGE IN THE SEMICONDUCTOR CDINGAS4 AT HIGH-TEMPERATURES
    TOYODA, T
    NAKANISHI, H
    ENDO, S
    IRIE, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (02) : L21 - L24
  • [7] HYDROSTATIC-PRESSURE DEPENDENCE OF THE FUNDAMENTAL ABSORPTION-EDGE OF GES CRYSTALS
    VALIUKONIS, G
    KRIVAITE, G
    BLETSKAN, DI
    SILEIKA, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 128 (01): : K37 - K41
  • [8] EFFECTS OF HYDROSTATIC-PRESSURE ON THE FUNDAMENTAL ABSORPTION-EDGE OF TLGASE2
    VES, S
    PHYSICAL REVIEW B, 1989, 40 (11): : 7892 - 7897
  • [9] DEPENDENCE OF THE ABSORPTION-EDGE OF TISE ON HYDROSTATIC-PRESSURE
    VALYUKONIS, GR
    MEDEISHIS, AS
    SHILEIKA, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 730 - 732
  • [10] DEPENDENCE OF THE ABSORPTION-EDGE OF SNSE ON HYDROSTATIC-PRESSURE
    VALYUKONIS, GR
    GUSEINOVA, DA
    KRIVAITE, GZ
    SHILEIKA, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 173 - 175