INSITU GROWTH OF HIGH-TC YBA2CU3O7-X FILMS AT HIGH DEPOSITION RATE BY LOW-PRESSURE MOCVD

被引：7
|
作者：
TAO, W [1 ]
QIAN, CT [1 ]
YE, CQ [1 ]
机构：
[1] ACAD SINICA,SHANGHAI INST ORGAN CHEM,SHANGHAI 200032,PEOPLES R CHINA
来源：
MATERIALS LETTERS | 1992年 / 14卷 / 5-6期
关键词：
D O I：
10.1016/0167-577X(92)90031-E
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new technique for metalorganic chemical vapor deposition (MOCVD) using a very low deposition pressure (less-than-or-equal-to 1 Torr) has been developed for rapid deposition of superconducting YBa2Cu3O7-x (YBCO) films. A low deposition pressure not only raises the vaporization rate of organic sources but also stabilizes their sublimation characteristics, especially to Ba(thd)2. At a substrate temperature of 800-degrees-C, a high growth rate of 20-mu-m/h can be obtained on ( 100) SrTiO3 substrates. The transport J(c) (0 T, 77 K) values of these 1-2-mu-m thick films reached 8.0 X 10(5) A/cm2 with T(c,0)>90 K.
引用
收藏
页码：255 / 258
页数：4
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