LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE

被引:40
作者
LORIMOR, OG
SPITZER, WG
机构
关键词
D O I
10.1063/1.1707905
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3687 / +
页数:1
相关论文
共 14 条
[1]  
BALKANSKI M, 1964, 7TH P INT C PHYS SEM, P1021
[2]  
COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024
[3]   THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].
DAWBER, PG ;
ELLIOTT, RJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&
[4]   FURTHER INVESTIGATION OF DIVACANCY REACTION DURING CU DIFFUSION IN GAAS [J].
FULLER, CS ;
WOLFSTIRN, KB .
SOLID STATE COMMUNICATIONS, 1964, 2 (09) :277-280
[5]   ACCEPTORS IN DONOR-DOPED GAAS RESULTING FROM LI DIFFUSION [J].
FULLER, CS ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :1914-&
[6]  
HAYES W, 1965, PHYS REV, V138, P1227
[7]   LOCAL MODE ABSORPTION OF A1 AND P IN GAAS [J].
LORIMOR, OG ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2509-&
[8]   EFFECT OF DEFECTS ON LATTICE VIBRATIONS [J].
MONTROLL, EW ;
POTTS, RB .
PHYSICAL REVIEW, 1955, 100 (02) :525-543
[9]   SOLUBILITY OF LITHIUM IN SILICON [J].
PELL, EM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :77-81
[10]   CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].
REISS, H ;
FULLER, CS ;
MORIN, FJ .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636