共 50 条
- [1] IMPURITY PHOTOSENSITIVITY OF SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 558 - 559
- [2] IMPURITY ELECTROABSORPTION IN SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 900 - 904
- [3] BERYLLIUM AS A DONOR IMPURITY IN SILICON-CARBIDE FIZIKA TVERDOGO TELA, 1978, 20 (02): : 448 - 451
- [4] NEGATIVE PHOTOCONDUCTIVITY OF INHOMOGENEOUS CUBIC SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (04): : 407 - 409
- [5] INTRINSIC PHOTOCONDUCTIVITY SPECTRUM OF CUBIC SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 796 - 797
- [7] EFFECT OF ALLOY IMPURITY ON PHOTOCONDUCTIVITY OF SILICON CARBIDE SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (09): : 2057 - +
- [10] EFFECT OF IMPURITY DOPING ON A REACTION-BONDED SILICON-CARBIDE AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (05): : 549 - 554