Measurement of the surface layer thickness of LEDs used as displacement damage monitors

被引：3
|
作者：
Houdayer, AJ
Barry, AL
Hinrichsen, PF
机构：
[1] COMMUN RES CTR,OTTAWA,ON K2H 8S2,CANADA
[2] UNIV MONTREAL,DEPT PHYS,RECH PHYS & TECHNOL COUCHES MINCES GRP GCM GRP,MONTREAL,PQ H3C 3J7,CANADA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 103卷 / 04期
关键词：
D O I：
10.1016/0168-583X(95)00667-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The thickness of the ''surface layer'' of LEDs that radiation must traverse before reaching the region sensitive to carrier lifetime degradation has been measured with low energy protons. In the case of the GaAs and SiC LEDs measured, comparison with scanning electron microscope (SEM) images shows that this layer corresponds closely to the thickness of the epitaxial layer above the junction.
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页码：529 / 532
页数：4
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