OXIDE BREAKDOWN DUE TO CHARGE ACCUMULATION DURING PLASMA-ETCHING

被引：24
|
作者：
RYDEN, KH [1 ]
NORSTROM, H [1 ]
NENDER, C [1 ]
BERG, S [1 ]
机构：
[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 12期
关键词：
D O I：
10.1149/1.2100351
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：3113 / 3118
页数：6
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