LASER-INDUCED OXYGEN-ADSORPTION AND INTENSITY DEGRADATION OF POROUS SI

被引:18
|
作者
ZHENG, XL [1 ]
CHEN, HC [1 ]
WANG, W [1 ]
机构
[1] SUNY ALBANY,DEPT CHEM,ALBANY,NY 12222
关键词
D O I
10.1063/1.352288
中图分类号
O59 [应用物理学];
学科分类号
摘要
For light-emitting porous Si there has been a severe problem with instability and degradation in the light emission. We performed in situ photoluminescence measurements to monitor the degradation process under ambient atmosphere of different gases and in ultrahigh-vacuum environment. We found that laser induced oxygen adsorption is the major cause for the light emission degradation, while the laser heating effect can be excluded. We also found the degraded intensity can be partially recovered by reducing the surface oxygen concentration.
引用
收藏
页码:3841 / 3842
页数:2
相关论文
共 50 条
  • [1] LASER-INDUCED DEGRADATION OF THE PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON
    TSAI, C
    LI, KH
    CAMPBELL, JC
    HANCE, BK
    WHITE, JM
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (06) : 589 - 591
  • [2] EFFECTS OF OXYGEN-ADSORPTION ON LASER-INDUCED SPUTTERING FROM GAP(110) SURFACES
    KANASAKI, J
    YAMASHITA, H
    OKANO, A
    HATTORI, K
    NAKAI, Y
    ITOH, N
    HAGLUND, RF
    SURFACE SCIENCE, 1991, 257 (1-3) : L642 - L646
  • [3] OXYGEN-ADSORPTION ON A GE DOSED SI(100) SURFACE
    SURNEV, S
    SURFACE SCIENCE, 1992, 278 (03) : 375 - 382
  • [4] Laser induced degradation of photoluminescence intensity of porous silicon
    Elhouichet, H.
    Oueslati, M.
    Bessaïs, B.
    Ezzaouia, H.
    Ben Younès, O.
    Journal of Porous Materials, 2000, 7 (01) : 307 - 310
  • [5] Laser Induced Degradation of Photoluminescence Intensity of Porous Silicon
    H. Elhouichet
    M. Oueslati
    B. Bessaïs
    H. Ezzaouia
    O. Ben Younès
    Journal of Porous Materials, 2000, 7 : 307 - 310
  • [6] Laser induced degradation of photoluminescence intensity of porous silicon
    Elhouichet, H
    Oueslati, M
    Bessaïs, B
    Ezzaouia, H
    Ben Younès, O
    JOURNAL OF POROUS MATERIALS, 2000, 7 (1-3) : 307 - 310
  • [7] METASTABLE ATOMIC CONFIGURATIONS FOR OXYGEN-ADSORPTION ON SI (100) SURFACES
    MIYAMOTO, Y
    OSHIYAMA, A
    ISHITANI, A
    SOLID STATE COMMUNICATIONS, 1990, 74 (05) : 343 - 346
  • [8] ROUGHNESS EFFECT UPON OXYGEN-ADSORPTION ON SI(100) SURFACES
    ANDRIAMANANTENASOA, I
    LACHARME, JP
    SEBENNE, CA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 902 - 905
  • [9] OXYGEN-ADSORPTION ON SI(110) STUDIED BY AUGER-ELECTRON SPECTROSCOPY
    MORGEN, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 908 - 909
  • [10] INITIAL-STAGES OF OXYGEN-ADSORPTION ON SI(111) - THE STABLE STATE
    MORGEN, P
    HOFER, U
    WURTH, W
    UMBACH, E
    PHYSICAL REVIEW B, 1989, 39 (06): : 3720 - 3734