CLOSE DRAIN SOURCE SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS

被引：1
|
作者：
SHENG, NH
CHANG, MF
LEE, CP
MILLER, DL
CHEN, RT
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期
关键词：
D O I：
10.1109/EDL.1986.26275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：11 / 12
页数：2
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