共 9 条
- [1] INFLUENCE OF IR RADIATION ON GUNN-DIODE OSCILLATIONS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1982, 25 (10): : 92 - 93
- [2] DEPENDENCE OF FREQUENCY OF A GUNN OSCILLATOR IN A LOW-Q RESONANCE SYSTEM ON BIAS VOLTAGE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1970, 15 (11): : 2142 - &
- [3] TEMPERATURE INFLUENCE ON WIDTH OF GUNN DIODE CURRENT-VOLTAGE CHARACTERISTICS ON EPITAXIAL-FILMS AND MONOCRYSTALS RADIOTEKHNIKA I ELEKTRONIKA, 1974, 19 (10): : 2209 - 2211
- [4] Influence of the Coulomb interaction on the spin-polarized current in the quantum dot system in the presence of the bias voltage pulse PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2013, 49 : 5 - 12
- [5] Influence of substrate bias voltage on structure and properties of Cr-Mo-Si-N coatings prepared by a hybrid coating system SURFACE & COATINGS TECHNOLOGY, 2008, 203 (5-7): : 624 - 627
- [6] Influence of bias voltage on microstructure and properties of Al-containing diamond-like carbon films deposited by a hybrid ion beam system SURFACE & COATINGS TECHNOLOGY, 2013, 229 : 217 - 221
- [8] Influence of N2 gas pressure and negative bias voltage on the microstructure and properties of Cr-Si-N films by a hybrid coating system JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (05): : 1188 - 1194
- [9] Influence of substrate bias voltage on deposition behavior and microindentation hardness of Ti-Si-N coatings by a hybrid coating system of arc ion plating and sputtering techniques SURFACE & COATINGS TECHNOLOGY, 2004, 179 (01): : 89 - 94