共 50 条
- [1] RAPID ISOTHERMAL ANNEALING OF BORON ION-IMPLANTED JUNCTIONSJOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 6009 - 6018LASKY, JB
- [2] PROPERTIES OF ION-IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C319 - C319WILSON, SRPAULSON, WMGREGORY, RBKRAUSE, SGRESSETT, JDMCDANIEL, FMDOWNING, RG
- [3] RAPID THERMAL ANNEALING OF ION-IMPLANTED TI FILMS ON SIPROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 159 - 164PRAMANIK, DDEAL, MSAXENA, ANWU, OK
- [4] RAPID ANNEALING OF ION-IMPLANTED GAASPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 745 - 766WESCH, WGOTZ, G
- [5] LASER RECRYSTALLIZATION AND HYDROGEN PLASMA ANNEALING OF ION-IMPLANTED POLYSILICONNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 348 - 351FANG, FLIN, CLSHEN, ZYTSOU, SC
- [6] ISOTHERMAL ANNEALING IN P+ ION-IMPLANTED SILICONJOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (03) : 766 - 773HASEGAWA, SSHIMIZU, T
- [7] RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORSJOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2913 - 2921NARAYAN, JHOLLAND, OW
- [8] RAPID THERMAL ANNEALING OF ION-IMPLANTED GAASSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 448 - 451SEALY, BJ
- [9] RAPID THERMAL ANNEALING OF ION-IMPLANTED CDTEJOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (03) : 157 - 161MEIKLE, SGTHOMPSON, DA
- [10] REVIEW OF RAPID THERMAL ANNEALING OF ION-IMPLANTED GAASJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2590 - 2596GILL, SSSEALY, BJ