THE EFFECT OF CHANNEL BORON IMPLANTS ON ELECTRON-MOBILITY IN NMOSFETS

被引：0
|
作者：
ASLAM, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 09期
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D O I：
10.1109/16.2594
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1563 / 1564
页数：2
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