RESISTIVITY CHANGES OF SEMICONDUCTING GLASS BASED ON VANADIUM PENTOXIDE

被引:0
|
作者
BALTA, P
BALTA, E
机构
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1435 / &
相关论文
共 50 条
  • [1] MICROSTRUCTURAL CHANGES IN VANADIUM PENTOXIDE IN CONTROLLED ENVIRONMENTS
    GAI, PL
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1983, 48 (03): : 359 - 371
  • [2] Vanadium pentoxide based antistatic coatings
    Somasiri, NLD
    Talbot, VM
    Clatanoff, WJ
    Morrison, ED
    ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1996, 1996, : 227 - 231
  • [3] Vanadium Pentoxide Nanoparticles Based Saturable Absorbers
    Molli, Muralikrishna
    Salian, Girish D.
    Aditha, Sai Kiran
    Muthukumar, Sai, V
    Rattan, Tanu Mimani A.
    Amrithapandian, S.
    Panigrahi, B. K.
    Kamisetti, Venkataramaniah
    FUNCTIONAL MATERIALS-BOOK, 2012, 1461 : 233 - 236
  • [4] CHEMISORPTION OF METHANOL AND ELECTRICAL CONDUCTIVITY CHANGES ON VANADIUM PENTOXIDE CATALYSTS
    BHATTACH.SK
    MAHANTI, P
    JOURNAL OF CATALYSIS, 1972, 25 (03) : 438 - &
  • [5] NUCLEAR MAGNETIC RESONANCE STUDY OF SEMICONDUCTING VANADIUM PHOSPHATE GLASS
    FRANCE, PW
    HOOPER, HO
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (06) : 1307 - &
  • [6] Crystallization kinetics of semiconducting vanadium borate glass using DSC
    Yousef, El Sayed
    Shaaban, E. R.
    El Hawary, M.
    Al-Salami, Ali E.
    Al-Assiri, M. S.
    PHYSICA SCRIPTA, 2010, 82 (04)
  • [7] PHOTOCONDUCTION OF VANADIUM PENTOXIDE
    HEVESI, I
    LANG, J
    CHEMERESYUK, GG
    ACTA PHYSICA ET CHEMICA, 1973, 19 (1-2): : 25 - 28
  • [8] AMORPHOUS VANADIUM PENTOXIDE
    RIVOALEN, L
    REVCOLEVSCHI, A
    LIVAGE, J
    COLLONGUES, R
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 21 (02) : 171 - 179
  • [9] VANADIUM PENTOXIDE POISONING
    WYERS, H
    PROCEEDINGS OF THE ROYAL SOCIETY OF MEDICINE-LONDON, 1951, 44 (03): : 262 - 262
  • [10] VANADIUM PENTOXIDE GELS
    LIVAGE, J
    CHEMISTRY OF MATERIALS, 1991, 3 (04) : 578 - 593