ACCURACY OF EFFECTIVE CHANNEL-LENGTH EXTRACTION USING THE CAPACITANCE METHOD

被引：6
|
作者：
YAO, CT
MACK, IA
LIN, HC
机构：
[1] UNIV MARYLAND, DEPT ELECT ENGN, COLLEGE PK, MD 20742 USA
[2] USN, RES LAB, WASHINGTON, DC 20375 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 04期
关键词：
D O I：
10.1109/EDL.1986.26368
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：268 / 270
页数：3
相关论文
共 50 条
  • [1] Measurement errors in effective channel-length extraction
    Terada, K
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1996, 79 (01): : 43 - 50
  • [2] EXTRACTION OF METALLURGICAL EFFECTIVE CHANNEL-LENGTH IN LDD MOSFETS
    HONG, S
    LEE, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (08) : 1461 - 1466
  • [3] A NOVEL EXTRACTION TECHNIQUE FOR THE EFFECTIVE CHANNEL-LENGTH OF MOSFET DEVICES
    LI, HH
    WU, CY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) : 856 - 863
  • [4] ON THE DETERMINATION OF THE EFFECTIVE CHANNEL-LENGTH OF MOSFETS
    PATEL, N
    GARCIA, M
    TITCOMB, S
    ANDERSON, R
    JOURNAL DE PHYSIQUE IV, 1994, 4 (C6): : 25 - 29
  • [5] A NEW SHIFT AND RATIO METHOD FOR MOSFET CHANNEL-LENGTH EXTRACTION
    TAUR, Y
    ZICHERMAN, DS
    LOMBARDI, DR
    RESTLE, PJ
    HSU, CH
    HANAFI, HI
    WORDEMAN, MR
    DAVARI, B
    SHAHIDI, GG
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) : 267 - 269
  • [6] Improving the accuracy of modified shift-and-ratio channel length extraction method using scanning capacitance microscopy
    Eng, CW
    Lau, WS
    Jiang, YY
    Vigar, D
    Tee, KC
    Chan, L
    Lim, VSW
    Trigg, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 1869 - 1872
  • [7] SERIES RESISTANCE AND EFFECTIVE CHANNEL-LENGTH EXTRACTION OF N-CHANNEL MOSFET AT 77-K
    ORTIZCONDE, A
    LIOU, JJ
    SANCHEZ, MG
    NUNEZ, MG
    ANDERSON, RL
    ELECTRONICS LETTERS, 1994, 30 (08) : 670 - 672
  • [8] A CAPACITANCE-BASED METHOD FOR EXPERIMENTAL-DETERMINATION OF METALLURGICAL CHANNEL-LENGTH OF SUBMICRON LDD MOSFETS
    LEE, SW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) : 403 - 412
  • [9] EXTRACTION OF GATE DEPENDENT SOURCE DRAIN RESISTANCE AND EFFECTIVE CHANNEL-LENGTH IN MOS DEVICES AT 77 K
    HWANG, CY
    KUO, TC
    WOO, JCS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (10) : 1863 - 1865
  • [10] MOST CHANNEL-LENGTH MEASUREMENT
    BATEMAN, IM
    MAGOWAN, JA
    ELECTRONICS LETTERS, 1970, 6 (21) : 669 - &
12345