INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS

被引：49

作者：

KIMERLING, LC ^{[1
]}

PETROFF, P ^{[1
]}

LEAMY, HJ ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 06期

关键词：

D O I：

10.1063/1.88760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：297 / 300

页数：4

共 11 条

[1] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES [J].

HARTMAN, RL ;

SCHWARTZ, B ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :304-&

[2]

KIMERLING LC, 1974, LATTICE DEFECTS SEMI, P589

[3] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

BYER, NE .

PROCEEDINGS OF THE IEEE, 1969, 57 (01) :25-&

[4] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[5]

LANG DV, 1974, LATTICE DEFECTS SEMI, P581

[6]

LEAMY HJ, UNPUBLISHED

[7] NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES [J].

PETROFF, P ;

JOHNSTON, WD ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :226-228

[8] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3899-3903

[9]

PETROFF PM, UNPUBLISHED

[10]

STEINER SA, 1968, SOLID STATE ELECTRON, V2, P65

← 1 2 →