CURRENT MECHANISM OF TUNNEL MIS SOLAR-CELLS

Dark current/voltage characteristics have been examined as a function of temperature for two structures of Al-p Si MIS solar cells. The solar cells have been prepared with interfacial oxide thickness ranging from 10 A to 20 A. The results show that for oxide thicknesses of 10 A the diode saturation current J//o behaves as a majority-carrier current, highly dependent on the effective metal-semiconductor barrier height phi //m//s and the oxide-tunnel exponent // CHI one-half delta , whereas for oxide thicknesses of 20 A, J//o behaves as a minority-carrier current highly dependent on the minority-carrier lifetime pi //n.