共 50 条
- [1] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
- [2] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
- [5] PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .2. INTRINSIC FREE-EXCITON NATURE OF QUANTUM WELL LUMINESCENCE APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 97 - 105
- [6] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier 17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730
- [8] MOLECULAR-BEAM EPITAXY OF MULTILAYER STRUCTURES WITH GAAS AND ALXGA1-XAS PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 143 - 153
- [9] Carbon incorporation in GaAs and AlxGa1-xAs layers grown by molecular-beam epitaxy Journal of Applied Physics, 1993, 74 (01):