PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .1. LUMINESCENCE OF THE CONSTITUENT ALXGA1-XAS BARRIER AND GAAS WELL MATERIAL

被引:20
|
作者
JUNG, H
FISCHER, A
PLOOG, K
机构
来源
关键词
D O I
10.1007/BF01197079
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:9 / 17
页数:9
相关论文
共 50 条
  • [1] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    HOLONYAK, N
    DRUMMOND, TJ
    CAMRAS, MD
    FISCHER, R
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
  • [2] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    STALL, RA
    ZILKO, J
    SWAMINATHAN, V
    SCHUMAKER, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
  • [3] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    WICKS, G
    WANG, WI
    WOOD, CEC
    EASTMAN, LF
    RATHBUN, L
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5792 - 5796
  • [4] PROPERTIES OF ALXGA1-XAS GAAS MULTIPLE QUANTUM WELL LASER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    FISCHER, R
    KLEM, J
    MORKOC, H
    SUN, YL
    KLEIN, MV
    OPTICAL ENGINEERING, 1984, 23 (03) : 323 - 325
  • [5] PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .2. INTRINSIC FREE-EXCITON NATURE OF QUANTUM WELL LUMINESCENCE
    JUNG, H
    FISCHER, A
    PLOOG, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 97 - 105
  • [6] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier
    Kim, DS
    Ko, HS
    Kim, YM
    Rhee, SJ
    Hong, SC
    Yee, DS
    Woo, JC
    Choi, HJ
    Ihm, J
    17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730
  • [7] BE DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
    ILEGEMS, M
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 445 - 445
  • [8] MOLECULAR-BEAM EPITAXY OF MULTILAYER STRUCTURES WITH GAAS AND ALXGA1-XAS
    JOYCE, BA
    FOXON, CT
    PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 143 - 153
  • [9] Carbon incorporation in GaAs and AlxGa1-xAs layers grown by molecular-beam epitaxy
    Giannini, C.
    Gerardi, C.
    Tapfer, L.
    Fischer, A.
    Ploog, K.H.
    Journal of Applied Physics, 1993, 74 (01):
  • [10] CARBON INCORPORATION IN GAAS AND ALXGA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    GERARDI, C
    TAPFER, L
    FISCHER, A
    PLOOG, KH
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 77 - 81