Emitter edge-thinning effect on InGaAs/InP double-heterostructure-emitter bipolar transistor

被引：3
|
作者：
Wu, YH [1 ]
Su, JS [1 ]
Hsu, WC [1 ]
Lin, W [1 ]
Liu, WC [1 ]
Kao, MJ [1 ]
Hsu, RT [1 ]
机构：
[1] MINIST TRANSPORT & COMMUN,TELECOMMUN LAB,TAYUAN,TAIWAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 11期
关键词：
emitter edge-thinning design; DHEBT; MOCVD; surface recombination current;
D O I：
10.1143/JJAP.34.5908
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An emitter edge-thinning design is used for a lattice-matched InGaAs/InP double-heterostructure-emitter bipolar transistor (DHEBT) grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Using the emitter edge-thinning technique, the surface recombination current is reduced and the current gain is improved. This structure reveals a typical current gain as high as 120 st a collector current density of 241 A/cm(2), along with an offset voltage as low as 45 mV. Furthermore, the problem of surface recombination current is also discussed in terms of the emitter size effect on current gain. The Gummel plots are shown to explain the influence of the emitter edge-thinning process on the base current ideality factor.
引用
收藏
页码：5908 / 5911
页数：4
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