SPECIFIC ROLE OF ISOELECTRONIC ANTIMONY IMPLANTS IN THE DISORDERING OF GAAS-ALGAAS MULTIQUANTUM-WELL STRUCTURES

被引：0
|
作者：
RAO, EVK [1 ]
KRAUZ, P [1 ]
VIEU, C [1 ]
JUHEL, M [1 ]
THIBIERGE, H [1 ]
机构：
[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The compositional disorder of GaAs-AlGaAs MQWs promoted by isoelectronic Sb implant damage and furnace anneals is shown to exhibit, in difference with the implants of several other nondopant species, some unique features highly useful for device applications. Each of these features is analysed in comparison with the data on In and Ga implanted MQWs. A satisfactory explanation to this new data on Al/Ga interdiffusion is proposed by considering the group V isoelectronic nature of Sb and the specific character of structural defects generated by its implant in GaAs-AlGaAs MQWs.
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页码：491 / 496
页数：6
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