ANALYSIS OF SWITCHING TIME OF MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENTS BASED ON SIMPLE-MODEL CALCULATION

被引:13
|
作者
MAEZAWA, K
机构
[1] NTT LSI Laboratories, Atsugi-shi Kanagawa, 243-01
关键词
RESONANT TUNNELING PHENOMENA; LOGIC CIRCUIT; EQUIVALENT CIRCUIT MODEL; OPERATION SPEED; SIMULATION;
D O I
10.1143/JJAP.34.1213
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, the operation speed of monostable-bistable transition logic elements (MOBILEs) is analyzed based on an equivalent circuit model. First, the intrinsic operation speed is examined independent of the subsequent stages. The results show that high-speed operation close to the intrinsic response time of resonant tunneling diodes is-possible under the appropriate conditions. It is also shown that the most important factor limiting the operation speed is the angle of the crossing at the unstable point in the load-line diagram, which dominates the potential curve. Next, the effects of the input capacitance of the subsequent stages are examined to clarify the operating frequency under practical conditions. The importance of reducing the input capacitance is shown for high-speed operation.
引用
收藏
页码:1213 / 1217
页数:5
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