EFFECTS OF ANNEALING IN DIFFERENT AMBIENTS ON THE HYDROGEN AND CHARGE-DISTRIBUTIONS IN CVD-SILICON NITRIDE FILMS

被引：0
|
作者：
MAES, HE [1 ]
REMMERIE, J [1 ]
机构：
[1] ESAT LAB, B-3030 HEVERLEE, BELGIUM
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C78 / C78
页数：1
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