EFFECT OF ANNEALING ON RADIATION-INDUCED DEFECTS IN N-SIC(6H) BOMBARDED BY THERMAL-NEUTRONS

被引：0
|
作者：
ATABAEV, IG
SAIDOV, MS
SALIEV, TM
SHAMURATOV, KA
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来源：
SEMICONDUCTORS | 1994年 / 28卷 / 08期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study has been made of how annealing affects radiation-induced defects in n-SiC(6H) after bombardment by thermal neutrons with fluxes of 10(19)-10(20) cm(-2). The annealing was carried out at temperatures of 600-1000 degrees C in vacuum. The electron density, optical absorption, and photoconductivity were measured. There are two groups of defects, for which the activation energies for annealing out are similar to 1 and similar to 3 eV.
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页码：817 / 819
页数：3
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