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- [1] FORMATION OF AN INSTABILITY DUE TO LOCALIZED DEVELOPMENT OF AN N-TYPE NEGATIVE DIFFERENTIAL CONDUCTIVITY DUE TO INTERACTION BETWEEN DRIFT AND CARRIER-DENSITY NONLINEARITIES.Soviet physics. Semiconductors, 1982, 16 (08): : 895 - 897Prokhorov, E.F.
- [2] INSTABILITY-DEVELOPMENT IN SEMICONDUCTORS WITH N-TYPE NEGATIVE DIFFERENTIAL CONDUCTIVITYFIZIKA TVERDOGO TELA, 1985, 27 (04): : 1169 - 1174KARAVAEV, GF
- [4] NEGATIVE DIFFERENTIAL CONDUCTANCE OF HOT-ELECTRONS IN A MAGNETIC-FIELD, DUE TO CARRIER-DENSITY NONLINEARITYSOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1292 - 1294ASRATYAN, KKKACHLISHVILI, ZS
- [5] N-TYPE NEGATIVE-RESISTANCE REGION DUE TO CARRIER GENERATIONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1879 - 1880AVAKYANT.GMMELIKYAN, EG
- [6] MICROWAVE MEASUREMENT OF DIFFERENTIAL NEGATIVE CONDUCTIVITY DUE TO INTERVALLEY TRANSFER OF HOT ELECTRONS IN N-TYPE GAASPHYSICS LETTERS A, 1967, A 24 (10) : 500 - +HAMAGUCHI, CKONO, TINUISHI, Y
- [7] CARRIER REDISTRIBUTION BETWEEN VALLEYS IN N-TYPE SILICON DUE TO SIZE EFFECTSOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 444 - 445KLIMOVSKAYA, AI
- [8] CARRIER REDISTRIBUTION BETWEEN THE VALLEYS IN n-TYPE SILICON DUE TO THE SIZE EFFECT.1973, 7 (03): : 444 - 445Klimovskaya, A.I.
- [9] N-TYPE DIFFERENTIAL NEGATIVE-RESISTANCE, OPTICAL BISTABILITY AND AUTOMODULATION OF RADIATION IN SEMICONDUCTORS DUE TO ELECTROOPTICAL EFFECTSJOURNAL DE PHYSIQUE, 1988, 49 (C-2): : 113 - 114RYVKIN, BS
- [10] Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier densityJournal of Computational Electronics, 2021, 20 : 274 - 279Shyamal MukhopadhyayBratati MukhopadhyayGopa SenP. K. Basu