PULSED LITHOGRAPHY USING ARF AND KRF LASERS

We report the results of studies on laser exposure at the wavelengths of ArF and KrF excimer lasers (193 and 248 nm) and the development of an anthracene-sensitized MMA-MMA resist composition. A pronounced increase in the contrast and sensitivity was detected in the preablation regime of exposure. This effect is shown to be brought about by the formation of a developer-permeable system of bound micropores, which arise when gaseous photolysis products are liberated. The contact method with single-pulse exposure gave a resolution of congruent-to 0.4-mu-m in a resist film with a thickness of congruent-to 0.6-mu-m.