THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS

被引：33

|

作者：

ILIADIS, A

SINGER, KE

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 01期

关键词：

D O I：

10.1016/0038-1101(83)90154-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：7 / &

相关论文

共 50 条

[1] AU-GE BASED OHMIC CONTACTS TO GAAS
GROVENOR, CRM
SOLID-STATE ELECTRONICS, 1981, 24 (08) : 792 - 793
[2] AU-GE BASED OHMIC CONTACTS ON GAAS
PROCOP, M
SANDOW, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (02): : K211 - K215
[3] EFFECT OF AU-GE THICKNESS ON OHMIC CONTACTS TO GAAS
LONNUM, F
JOHANNESSEN, JS
ELECTRONICS LETTERS, 1986, 22 (12) : 632 - 633
[4] AU-GE/IN OHMIC CONTACTS TO N-TYPE GAAS
BARNARD, WO
WILLIS, AJ
THIN SOLID FILMS, 1988, 165 (01) : 77 - 82
[5] METALLURGICAL BEHAVIOR OF NI/AU-GE OHMIC CONTACTS TO GAAS
ILIADIS, A
SINGER, KE
SOLID STATE COMMUNICATIONS, 1984, 49 (01) : 99 - 101
[6] MICROSTRUCTURE AND RESISTIVITY OF LASER-ANNEALED AU-GE OHMIC CONTACTS ON GAAS
AINA, O
CHIANG, SW
LIU, YS
BACON, F
ROSE, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) : 2183 - 2187
[7] RAMAN-SCATTERING STUDY OF ALLOYED AU-GE OHMIC CONTACTS TO GAAS
KIRILLOV, D
CHUNG, Y
APPLIED PHYSICS LETTERS, 1987, 51 (11) : 846 - 848
[8] A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs
Islam, MS
McNally, PJ
MICROELECTRONIC ENGINEERING, 1998, 40 (01) : 35 - 42
[9] MICROSTRUCTURE AND CONTACT RESISTIVITY OF LASER-ANNEALED AU-GE OHMIC CONTACTS TO GAAS
AINA, O
CHIANG, SW
LIU, YS
ROSE, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C384 - C384
[10] PROPERTIES OF AU-GE OHMIC CONTACTS AFTER THE ALLOYING PROCESS
SKRABKA, T
SOLID-STATE ELECTRONICS, 1994, 37 (01) : 195 - 197

← 1 2 3 4 5 →