ELECTROLUMINESCENCE FROM LATERAL P-N-JUNCTIONS GROWN ON (111)A GAAS PATTERNED SUBSTRATES

被引：14
|
作者：
INAI, M
YAMAMOTO, T
TAKEBE, T
WATANABE, T
机构：
[1] ATR Optical and Radio Communications Research Laboratories, Soraku-gun Kyoto, 619-02
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 12A期
关键词：
MBE; (111)A GAAS; PATTERNED SUBSTRATE; LATERAL P-N JUNCTION; LIGHT EMISSION; ELECTROLUMINESCENCE;
D O I：
10.1143/JJAP.32.L1718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lateral p-n junctions were grown on (111)A GaAs patterned substrates by a plane selective doping method and electroluminescence (EL) properties of the lateral p-n junctions were investigated. EL was observed along the [011] line, and the line formed a triangular pattern on the substrate. The emission spectrum had a sharp peak at 870 nm at room temperature. Even though these p-n junctions were not optimized for LED structures, the emission intensity of EL was higher than that from p-n junctions of conventional structure. These characteristics are advantages of lateral p-n junctions grown on (111)A GaAs patterned substrates. These are the first observations of EL from (111)A GaAs lateral p-n junctions.
引用
收藏
页码：L1718 / L1721
页数：4
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