OPTICAL GENERATION OF CARRIERS BY PHOTOIONIZATION OF DEEP CENTERS IN A STRONG ELECTRIC-FIELD

被引：0

作者：

TIMASHEV, SF ^{[1
]}

机构：

[1] ACAD SCI USSR, PHYS CHEM INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：67 / 70

页数：4

共 50 条

[1] OPTICAL GENERATION OF CARRIERS BY PHOTOIONIZATION OF DEEP CENTERS IN A STRONG ELECTRIC FIELD.
Timashev, S.F.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (01): : 67 - 70
[2] OPTICAL-TRANSITIONS AT DEEP IMPURITY CENTERS IN AN ELECTRIC-FIELD
ENDERLEIN, R
FIDDICKE, J
BECHSTEDT, F
PEUKER, K
BAUER, RS
JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 325 - 328
[3] INFLUENCE OF AN ELECTRIC-FIELD ON PHOTOIONIZATION OF DEEP CENTERS AS A RESULT OF ELECTRONIC-VIBRATIONAL TRANSITIONS
BAKALEINIKOV, LA
BULYARSKII, SV
GRUSHKO, NS
GUTKIN, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 216 - 217
[4] PHOTOIONIZATION OF QUANTUM-WELLS IN A STRONG ELECTRIC-FIELD
PETROV, AG
SHIK, AY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 896 - 899
[5] OPTICAL POLARON IN A STRONG ELECTRIC-FIELD
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[6] THERMOIONIZATION OF DEEP CENTERS IN SEMICONDUCTORS IN AN ELECTRIC-FIELD
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JETP LETTERS, 1985, 42 (10) : 497 - 500
[7] EFFECT OF ELECTRON-PHONON INTERACTION ON THE IONIZATION OF DEEP CENTERS BY A STRONG ELECTRIC-FIELD
KARPUS, V
JETP LETTERS, 1986, 44 (07) : 430 - 433
[8] ELECTRIC-FIELD MECHANISM OF RELAXATION OF PARAMAGNETIC CENTERS INTERACTING WITH CARRIERS
DEIGEN, MF
BUGMEIST.BE
JETP LETTERS, 1974, 19 (03) : 102 - 104
[9] DRAG OF CARRIERS BY PHOTONS IN A SEMICONDUCTOR SUBJECTED TO A STRONG ELECTRIC-FIELD
DZHAKSIMOV, E
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1059 - 1059
[10] IMPACT IONIZATION OF DEEP CENTERS IN HIGH ELECTRIC-FIELD
TIMASHEV, SF
FIZIKA TVERDOGO TELA, 1973, 15 (04): : 1106 - 1112

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