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- [1] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3209 - 3211LEE, MKWUU, DSTUNG, HH
- [2] HETEROEPITAXIAL GROWTH OF ZNSE ON SI(111) BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4241 - 4243LEE, MKCHANG, JHYEH, MYLIN, YF
- [3] STRAIN VARIATIONS IN HETEROEPITAXIAL INP-ON-SI GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1989, 54 (22) : 2244 - 2246WUU, DSHORNG, RHLEE, MK
- [4] GROWTH OF ULTRAPURE AND SI-DOPED INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1985, 46 (05) : 476 - 478DIFORTEPOISSON, MABRYLINSKI, CDUCHEMIN, JP
- [5] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP, GAINAS AND GAINASPREVUE TECHNIQUE THOMSON-CSF, 1983, 15 (01): : 59 - 86RAZEGHI, M
- [6] HETEROEPITAXIAL GROWTH OF ZNSE ON (100) SI BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1989, 55 (18) : 1850 - 1852LEE, MKYEH, MYCHANG, CC
- [7] LOW-TEMPERATURE HETEROEPITAXIAL GROWTH OF SIGE ON SI WITH LOW-PRESSURE CHEMICAL VAPOR-DEPOSITIONJOURNAL OF CRYSTAL GROWTH, 1993, 126 (2-3) : 285 - 292NAKAI, KOZEKI, MNAKAJIMA, K
- [8] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH AND CHARACTERIZATION OF DELTA-DOPED INPJOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 867 - 869DIFORTEPOISSON, MABRYLINSKI, CBLONDEAU, ELAVIELLE, DPORTAL, JC
- [9] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDSJOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395RAZEGHI, MPOISSON, MALARIVAIN, JPDUCHEMIN, JP
- [10] GROWTH OF INGAAS/INP QUANTUM-WELL STRUCTURES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONMICROELECTRONIC ENGINEERING, 1992, 18 (1-2) : 75 - 88MCCRARY, VRLEE, JWCHU, SNGSLUSKY, SEGBRELVI, MALIVESCU, GTHOMAS, PMKETELSEN, LJPZILKO, JL