LOW INTERFACE STATE DENSITY AT AN EPITAXIAL ZNSE EPITAXIAL GAAS INTERFACE

被引:39
|
作者
QIAN, QD
QIU, J
MELLOCH, MR
COOPER, JA
KOLODZIEJSKI, LA
KOBAYASHI, M
GUNSHOR, RL
机构
关键词
D O I
10.1063/1.100715
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1359 / 1361
页数:3
相关论文
共 50 条
  • [1] LOW INTERFACE STATE DENSITY AT PSEUDOMORPHIC ZNSE EPITAXIAL GAAS INTERFACE
    QIAN, QD
    QIU, J
    KOBAYASHI, M
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    MELLOCH, MR
    COOPER, JA
    GONSALVES, JM
    OTSUKA, N
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 423 - 428
  • [2] EFFECT OF GAAS SURFACE RECONSTRUCTION ON INTERFACE STATE DENSITY OF EPITAXIAL ZNSE EPITAXIAL GAAS HETEROSTRUCTURES
    QIU, J
    QIAN, QD
    KOBAYASHI, M
    GUNSHOR, RL
    MENKE, DR
    LI, D
    OTSUKA, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 701 - 704
  • [3] LOW INTERFACE STATE DENSITIES IN AS-GROWN EPITAXIAL ZNSE EPITAXIAL GAAS HETEROSTRUCTURES
    QIU, J
    QIAN, QD
    KOBAYASHI, M
    GUNSHOR, RL
    MENKE, DR
    LI, D
    OTSUKA, N
    KOLODZIEJSKI, LA
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 201 - 206
  • [4] INFLUENCE OF GAAS SURFACE STOICHIOMETRY ON THE INTERFACE STATE DENSITY OF AS-GROWN EPITAXIAL ZNSE EPITAXIAL GAAS HETEROSTRUCTURES
    QIU, J
    QIAN, QD
    GUNSHOR, RL
    KOBAYASHI, M
    MENKE, DR
    LI, D
    OTSUKA, N
    APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1272 - 1274
  • [5] LOW INTERFACE STATE DENSITY AT THE MBE GROWN, THERMALLY ANNEALED ZNSE/GAAS INTERFACE
    QIAN, QD
    QIU, J
    MELLOCH, MR
    COOPER, JA
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    KOBAYASHI, M
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 79 - 82
  • [6] LOW INTERFACE STATE DENSITY AT THE MBE GROWN, THERMALLY ANNEALED ZNSE/GAAS INTERFACE
    QIAN, QD
    QIU, J
    MELLOCH, MR
    COOPER, JA
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    KOBAYASHI, M
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 79 - 82
  • [7] Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality
    Kim, CC
    Chen, YP
    Sivananthan, S
    Tsen, SCY
    Smith, DJ
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 613 - 618
  • [8] INTERFACE STUDY IN EPITAXIAL VAPOUR GROWN GAAS
    HOLLAN, L
    HALLAIS, J
    SCHILLER, C
    JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 165 - &
  • [9] INTERFACE STRUCTURE OF EPITAXIAL ZNTE ON (100) GAAS
    FEUILLET, G
    DICIOCCIO, L
    MILLION, A
    CIBERT, J
    TARARENKO, S
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 135 - 140
  • [10] EPITAXIAL GROWTH OF ZNSE ON GAAS
    BACZEWSK.A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 577 - &