NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENT

被引：1

作者：

CHANG, SJ ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU 30050, TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 10期

关键词：

D O I：

10.1016/0038-1101(93)90054-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ion bombardment on sidegating effect in GaAs MESFETs has been studied by two-dimensional numerical simulations. Respective contributions of the bombardment induced electron traps, hole traps and neutral recombination centers to the suppression of sidegating effect in GaAs MESFETs have been studied. The increase of electron traps and the induced neutral recombination centers was found to be the main reason for the reduction of the sidegating effect. The results provide a further support to the sidegating picture in which Schottky contacts on the semi-insulating substrate play an important role.

引用

页码：1455 / 1464

页数：10

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