AGING OF SUB-MICRON MOS-TRANSISTORS AFTER ELECTRICAL STRESS

被引：8
|
作者：
CRISTOLOVEANU, S [1 ]
CABONTILL, B [1 ]
KANG, KN [1 ]
GENTIL, P [1 ]
GAUTIER, J [1 ]
机构：
[1] CEA,IRDI,CEN GRENOBLE,LETI,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1984年 / 19卷 / 11期
关键词：
D O I：
10.1051/rphysap:019840019011093300
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：933 / 939
页数：7
相关论文
共 50 条
  • [1] HOT-ELECTRON RELIABILITY OF DEEP SUB-MICRON MOS-TRANSISTORS
    REIMBOLD, G
    PAVIETSALOMON, F
    HADDARA, H
    GUEGAN, G
    CRISTOLOVEANU, S
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 665 - 668
  • [2] SHALLOW BF2+ IMPLANT AND THIN THERMAL OXIDE FOR SUB-MICRON MOS-TRANSISTORS
    WU, S
    COSWAY, RG
    HODEL, MW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C327 - C327
  • [3] Punchthrough currents in sub-micron short channel MOS transistors
    Fu, KY
    Tsang, YL
    SOLID-STATE ELECTRONICS, 1997, 41 (03) : 435 - 439
  • [4] DEGRADATION OF SUB-MICRON MOSFETS AFTER AGING
    CABON, B
    GHIBAUDO, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (01): : 393 - 404
  • [5] CHARACTERISTICS OF SUB-MICRON MOS DEVICES
    HAGIWARA, T
    DENKI KAGAKU, 1982, 50 (07): : 617 - 623
  • [6] Modeling the behaviour of the sub-micron MOS transistors in mixed-signal integrated circuits
    Dobrescu, D.
    Vizireanu, N.
    Dobrescu, L.
    CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 2005, 1-2 : 339 - 342
  • [7] ELECTRICAL MOBILITY OF SUB-MICRON PARTICLES
    MEGAW, WJ
    WELLS, AC
    NATURE, 1968, 219 (5151) : 259 - &
  • [8] NUMERICAL MODELING OF SUB-MICRON BIPOLAR-TRANSISTORS
    ADAMSONE, AI
    POLSKY, BS
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1989, 32 (06): : 74 - 75
  • [9] PROCESS DESIGN OPTIMIZATION FOR SUB-MICRON MOS DEVICES
    SHIBATA, T
    KONAKA, M
    MIMURA, S
    DANG, R
    IIZUKA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C101 - C101
  • [10] FORMATION OF SUB-MICRON PMOS TRANSISTORS BY IMPLANTATION INTO SILICIDE
    BARLOW, KJ
    ELECTRONICS LETTERS, 1988, 24 (15) : 949 - 950
12345