MECHANISM OF GROWTH OF ULTRATHIN SIO2 LAYERS ON SILICIDE SUBSTRATES

被引:6
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CROS, A
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10.1016/0039-6028(85)90969-0
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O64 [物理化学(理论化学)、化学物理学];
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070304 ; 081704 ;
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页码:702 / 707
页数:6
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