HOLE DRIFT VELOCITY IN SILICON

被引：189

作者：

OTTAVIANI, G ^{[1
]}

REGGIANI, L ^{[1
]}

CANALI, C ^{[1
]}

NAVA, F ^{[1
]}

ALBERIGIQUARANTA, A ^{[1
]}

机构：

[1] UNIV MODENA, IST FISICA, VIA UNIV 4, MODENA, ITALY

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.12.3318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3318 / 3329

页数：12

共 40 条

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[8] SPIN-ORBIT EFFECT IN SI VALENCE BAND [J].

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[9]

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