OPTICAL DIELECTRIC-CONSTANT OF PB-1-XSN-XTE IN NARROW-GAP REGION

被引：26
|
作者：
LOWNEY, JR
SENTURIA, SD
机构：
[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139
[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期
关键词：
D O I：
10.1063/1.322889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1771 / 1774
页数：4
相关论文
共 50 条
  • [1] THE DIELECTRIC-CONSTANT IN NARROW-GAP SEMICONDUCTORS
    TRZECIAKOWSKI, W
    BAJ, M
    SOLID STATE COMMUNICATIONS, 1984, 52 (07) : 669 - 671
  • [2] EFFECTIVE MASS OF HOLES IN PB-1-XSN-XTE
    NESMELOVA, IM
    BARYSHEV, NS
    KHARIONOVSKII, YS
    AKHMEDOVA, ZI
    KOSHELEVA, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 650 - 651
  • [3] ENERGY-GAP AND OPTICAL DIELECTRIC-CONSTANT OF PB1-XCDXSE FILMS
    BALEVA, M
    MAKSIMOV, M
    SENDOVA, M
    INFRARED PHYSICS, 1987, 27 (06): : 389 - 397
  • [4] OUTPUT COUPLING FOR CLOSELY CONFINED PB-1-XSN-XTE DOUBLE-HETEROSTRUCTURE LASERS
    DAVIES, RW
    WALPOLE, JN
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (05) : 291 - 303
  • [5] THE ANOMALOUSLY HIGH DIELECTRIC-CONSTANT IN NARROW-GAP SEMICONDUCTOR CD0.17HG0.83TE
    ARONZON, BA
    KOPYLOV, AV
    MEILIKHOV, EZ
    MIRONOV, OA
    RARENKO, IM
    SOLID STATE COMMUNICATIONS, 1982, 42 (11) : 779 - 782
  • [6] OPEN TUBE VAPOR TRANSPORT GROWTH OF PB-1-XSN-XTE EPITAXIAL-FILMS FOR INFRARED DETECTORS
    BELLAVANCE, DW
    JOHNSON, MR
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) : 363 - 380
  • [7] Ion Implantation in Narrow-Gap CdxHg1-xTe Solid Solutions
    Talipov, N. Kh.
    Voitsekhovskii, A. V.
    RUSSIAN PHYSICS JOURNAL, 2018, 61 (06) : 1005 - 1023
  • [8] Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions
    N. Kh. Talipov
    A. V. Voitsekhovskii
    Russian Physics Journal, 2018, 61 : 1005 - 1023
  • [9] GALVANOMAGNETIC PHENOMENA IN NARROW-GAP CDXHG-1-XTE SOLID-SOLUTIONS
    BOVINA, LA
    SAVCHENKO, YN
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1362 - 1365
  • [10] NARROW-GAP PB1-XSNXTE1-YSEY SOLID-SOLUTIONS WITH A CONSTANT LATTICE-PARAMETER
    STARIK, PM
    BRITOV, AD
    LUCHITSKII, RM
    LOTOTSKII, VB
    MIKITYUK, VI
    KARAVAEV, SM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1353 - 1354
12345